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Large size hexagonal phase GaTe (Gallium telluride) crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport (CVT)
More than a decade of growth optimization in chemical vapor transport (CVT) as well as flux growth lead to our flawless WS2 crystals.
Our single crystal GeS (Germanium sulfide) crystals come with guaranteed optical, electronic, and structural anisotropy.
Tin sulfooxide is a ternary alloy belonging to M2X3 family of materials.
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